Method to form shallow trench isolation structures

Details Method to form shallow trench isolation structures Method to form shallow trench isolation structures

1999-06-14

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438221, 438296, 438359, H01L 2176

Patent

active

061402060

ABSTRACT:
A method of forming a shallow trench isolation trenches in a silicon substrate of an integrated circuit device is achieved. A silicon substrate is provided. A buffer layer is deposited overlying the silicon substrate. An etching endpoint layer is deposited overlying the buffer layer. A silicon layer is deposited layer overlying the etching endpoint layer. A photoresist layer is coated overlying the silicon layer. The photoresist layer is developed wherein the photoresist layer is removed where the trenches are planned. The silicon layer, the etching endpoint layer, and the buffer layer are etched through to expose the top surface of the silicon substrate. The silicon layer and the silicon substrate layer are etched until the top surface of the etching endpoint layer is exposed, and the trenches are thereby formed. The integrated circuit device is completed.

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