Method to form both high and low-k materials over the same...

Details Method to form both high and low-k materials over the same... Method to form both high and low-k materials over the same...

2006-06-13

2006-06-13

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Forming or treating electrical conductor article

C216S018000, C216S041000, C216S074000, C438S689000, C438S723000, C438S724000, C438S725000, C438S587000

Reexamination Certificate

active

07060193

ABSTRACT:
A new method of provided for forming in one plane layers of semiconductor material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.

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