Method to form a polycrystalline film on a substrate

Details Method to form a polycrystalline film on a substrate Method to form a polycrystalline film on a substrate

1996-05-02

1998-11-03

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427553, 427574, 427578, 4272481, 427249, B05D 306, C23C 1622

Patent

active

058305386

ABSTRACT:
A semiconductor processing method is provided for growing a polycrystalline film by preferably chemical vapor deposition (CVD) from a suitable precursor gas or gases on a substrate which has been coated with seeds, preferably of nanocrystal size, of the semiconductor material. The structure of the nanocrystal seeds (not the substrate) serves as a template for the structure of the final polycrystalline film. The density of the seeds and the thickness of the grown polycrystalline film determine the grain size of the polycrystalline film at the surface of said film. Epitaxial CVD onto the seeds to produce the polycrystalline film avoids the recrystallization step generally necessary for the formation of a polycrystalline film, and thus allows for the growth of polycrystalline films at reduced temperatures.

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