Method to fabricate stud structure for self-aligned metallizatio

Details Method to fabricate stud structure for self-aligned metallizatio Method to fabricate stud structure for self-aligned metallizatio

1981-12-30

1984-01-10

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29577C, 29578, 29580, 29591, 148 15, 148187, 156643, 156648, 156653, 156657, 357 49, 357 50, 357 59, 357 68, 427 88, H01L 21302, H01L 2176

Patent

active

044246218

ABSTRACT:
A self-aligned metal process is described which achieves self-aligned metal silicon contacts and micron-to-submicron contact-to-contact and metal-to-metal spacing by use of the pattern of dielectric material having a thickness in the order of a micron or less. The pattern of recessed oxide isolation to device area is also self-aligned by this process. The process results in substantially planar integrated circuit structure. The process is applicable to either a bipolar integrated circuit either bipolar or MOS field effect transistor integrated circuits.

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"A New Edge-defined Approach for Sub-micrometer MOSFET Fabrication", by W. R. Hunter et als., IEEE Electron Device Letters, vol. EDL-2, No. 1, Jan. 81, pp. 4-6.
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