Method to fabricate ion-implanted layers with abrupt edges to re

Details Method to fabricate ion-implanted layers with abrupt edges to re Method to fabricate ion-implanted layers with abrupt edges to re

1976-06-30

1977-06-14

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 148 188, 357 91, H01L 21265

Patent

active

040295222

ABSTRACT:
A method is disclosed to implant layers in semiconductor substrates with asymmetrical edges, that is, one edge slopes towards the surface of the substrate and the other terminates abruptly inside the bulk. The method involves using lift-off techniques to make ion-stopping masks with near-vertical sidewalls which delineate the abrupt edges of the ion-implanted layers. The application of this method to fabricate Schottky barrier FET's and bipolar transistors yields devices with reduced parasitic resistance without adversely impacting other related electrical parameters such as breakdown voltage and capacitance.

REFERENCES:
patent: 3413531 (1968-11-01), Leith
patent: 3431150 (1969-03-01), Dolan, Jr. et al.
patent: 3852119 (1974-12-01), Gosney et al.
Fairfield et al. "Contact Buried Ion Implanted Layers," IBM Tech. Discl. Bull., vol. 13, No. 5, Oct. 1970, p. 1052.

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