Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2006-09-12
2006-09-12
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S421000, C438S311000, C257SE21581
Reexamination Certificate
active
07105420
ABSTRACT:
A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.
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Cha Cher Liang
Chan Lap
Chew Kok Wai Johnny
Chua Chee Tee
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
National University of Singapore
Richards N. Drew
Saile Ackerman LLC
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