Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2005-06-14
2005-06-14
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S624000, C257S626000
Reexamination Certificate
active
06906401
ABSTRACT:
A method of forming a quasi-self-aligned heterojunction bipolar transistor (HBT) that exhibits high-performance is provided. The method includes the use of a patterned emitter landing pad stack which serves to improve the alignment for the emitter-opening lithography and as an etch stop layer for the emitter opening etch. The present invention also provides an HBT that includes a raised extrinsic base having monocrystalline regions located beneath the emitter landing pad stack.
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Dunn James S.
Feilchenfeld Natalie B.
Liu Qizhi
Stricker Andreas D.
International Business Machines - Corporation
Sabo, Esq. William D.
Scully Scott Murphy & Presser
Wojciechowicz Edward
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