Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-05-16
2006-05-16
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S524000, C438S525000, C438S221000
Reexamination Certificate
active
07045436
ABSTRACT:
A method (200) of forming an isolation structure is disclosed, and includes forming an isolation trench in a semiconductor body (214) associated with an isolation region, and filling a bottom portion of the isolation trench with an implant masking material (216). An angled ion implant is performed into the isolation trench (218) after having the bottom portion thereof filled with the implant masking material, thereby forming a threshold voltage compensation region in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material (220).
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Chatterjee Amitava
Quevedo-Lopez Manuel
Tang Shaoping
Tsao Alwin
Yoon Jong
Brady III W. James
Fourson George
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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