Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-07-16
2008-10-28
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S410000, C438S435000, C438S437000, C257SE21549
Reexamination Certificate
active
07442618
ABSTRACT:
Structures and methods for forming keyhole shaped regions for isolation and/or stressing the substrate are shown. In a first embodiment, we form an inverted keyhole shaped trench in the substrate in the first opening preferably using a two step etch. Next, we fill the inverted keyhole trench with a material that insulates and/or creates stress on the sidewalls of the inverted keyhole trench. In a second embodiment, we form a keyhole stressor region adjacent to the gate and isolation structures. The keyhole stressor region creates stress near the channel region of the FET to improve FET performance. The stressor region can be filled with an insulator or a semiconductor material.
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Chong Yung Fu
Greene Brian Joseph
Panda Siddhartha
Rovedo Nivo
Chartered Semiconductor Manufacturing Ltd
Horizon IP Pte Ltd
International Business Machines Corporation (IBM)
Lebentritt Michael S
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