Method to determine the crystalline properties of an interface o

Details Method to determine the crystalline properties of an interface o Method to determine the crystalline properties of an interface o

1984-10-29

1987-02-10

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, G01R 3126

Patent

active

046425659

ABSTRACT:
Crystalline quality of a semiconductor material near its interface with an insulator is evaluated by the photovoltage response to a light beam scanned in wavelength. The crystalline quality is determined from the photovoltage interference pattern in the region of intrinsic excitation of the material. A body of silicon-on-sapphire (SOS) is used to illustrate the method.

REFERENCES:
patent: 4333051 (1982-06-01), Goodman
patent: 4352016 (1982-09-01), Duffy et al.
patent: 4352017 (1982-09-01), Duffy et al.
Goodman, A. M.; "Silicon-Wafer-Surface . . ."; J. Appl. Phy.; 53(11); Nov. 1982, pp. 7561-7565.

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