Method to detect surface metal contamination

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed

Reexamination Certificate

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C438S016000

Reexamination Certificate

active

06911347

ABSTRACT:
A method for detecting surface or near surface metal contamination in a semiconductor or silicon structure is described in which the structure or a part thereof is exposed to an excitation beam of predetermined wavelength and collecting luminescence from the structure in as the form of PL map having a substantially uniform PL intensity level provided by the semiconductor; and inspecting the map for one or more regions of enhanced PL intensity identifying characteristic surface or near surface metal contamination. In particular, the method is applied as an in-process quality control or as a quality control of processed structures such as interconnects.

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Jean-Pierre Joly, “Metallic contamination assessment of Silicon wafers”, Microelectronic Engineering, vol. 40, No. 3-4, Nov. 1, 1998, pp. 285-294.
V. Higgs et al., “Application Of Room Temperature Photoluminescence For The Characterization Of Impurities And Defects In Silicon”, Electrochemical Society Proceedings, vol. 99-16, ppg., Sep. 13, 1999, pp. 21-37.

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