Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2005-06-28
2005-06-28
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S016000
Reexamination Certificate
active
06911347
ABSTRACT:
A method for detecting surface or near surface metal contamination in a semiconductor or silicon structure is described in which the structure or a part thereof is exposed to an excitation beam of predetermined wavelength and collecting luminescence from the structure in as the form of PL map having a substantially uniform PL intensity level provided by the semiconductor; and inspecting the map for one or more regions of enhanced PL intensity identifying characteristic surface or near surface metal contamination. In particular, the method is applied as an in-process quality control or as a quality control of processed structures such as interconnects.
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AOTI Operating Company, Inc.
Jacobson & Holman PLLC
Pert Evan
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