Method to deposit highly conformal CVD films

Details Method to deposit highly conformal CVD films Method to deposit highly conformal CVD films

1997-04-29

1998-09-01

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118723E, C23C 1600

Patent

active

058006176

ABSTRACT:
A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.

REFERENCES:
patent: 4699801 (1987-10-01), Ito
patent: 4849260 (1989-07-01), Kusumoto
patent: 4872947 (1989-10-01), Wang
patent: 5290358 (1994-03-01), Rubloff
patent: 5393577 (1995-02-01), Uesugi
patent: 5462767 (1995-10-01), Yamazaki

Affiliated with

Also associated with

Rating

Method to deposit highly conformal CVD films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to deposit highly conformal CVD films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to deposit highly conformal CVD films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-265888