Method to cure mobile ion contamination in semiconductor process

Details Method to cure mobile ion contamination in semiconductor process Method to cure mobile ion contamination in semiconductor process

1998-05-01

2000-09-05

Smith, Matthew

Semiconductor device manufacturing: process

Gettering of substrate

438624, 438760, 438791, 438775, 438761, H01C 21324

Patent

active

061142220

ABSTRACT:
A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.

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