Method to create super secondary grain growth in narrow...

Details Method to create super secondary grain growth in narrow... Method to create super secondary grain growth in narrow...

2008-10-16

2010-06-29

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S049000, C257S050000, C257S051000

Reexamination Certificate

active

07745935

ABSTRACT:
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.

REFERENCES:
patent: 7622204 (2009-11-01), Maeda et al.
patent: 2005/0142388 (2005-06-01), Hirayama et al.
patent: 2005/0150770 (2005-07-01), Chen
patent: 2005/0153545 (2005-07-01), Hong
patent: 2005/0153548 (2005-07-01), Hong
patent: 2005/0186793 (2005-08-01), Omoto et al.
patent: 2006/0141293 (2006-06-01), Gouke
patent: 2006/0202345 (2006-09-01), Barth et al.

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