Method to control residual stress in a film structure and a...

Details Method to control residual stress in a film structure and a... Method to control residual stress in a film structure and a...

2005-02-18

2008-12-30

Zacharia, Ramsey (Department: 1794)

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

C428S213000, C428S411100

Reexamination Certificate

active

07470462

ABSTRACT:
A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.

REFERENCES:
patent: 5753134 (1998-05-01), Biebl
patent: 5943356 (1999-08-01), Kawai
patent: 6268068 (2001-07-01), Heuer et al.
patent: 6500759 (2002-12-01), Asakawa
patent: 6784101 (2004-08-01), Yu et al.
patent: 2002/0163062 (2002-11-01), Wang et al.
patent: 2003/0104649 (2003-06-01), Ozgur et al.
patent: 2003/0162368 (2003-08-01), Connell et al.
patent: 2003/0194870 (2003-10-01), Hsu
patent: 2004/0092052 (2004-05-01), Chang et al.
patent: 2004/0180465 (2004-09-01), Musolf et al.
patent: 2004/0235296 (2004-11-01), Bailey et al.

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