Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-09-22
2009-12-15
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S040000, C257SE29071, C257SE29094, C438S618000, C977S788000
Reexamination Certificate
active
07633080
ABSTRACT:
Numerous embodiments of a method to assemble nano-materials on a platform are described. In one embodiment, a nano-material is functionalized with a first bondable group. The functionalized nano-material is disposed on an assembly platform having an electrode to form a first layer. Additional layers of the nano-material may be formed above the first layer to form a semiconductor device. In one embodiment, the nano-material may be a carbon nanotube.
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Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Toledo Fernando L
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