Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-01
2008-04-01
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S210130
Reexamination Certificate
active
07352627
ABSTRACT:
As part of the present invention, a memory cell may be operated using reference cells having a threshold offset circuit. According to some embodiments of the present invention, a threshold offset value may be determined for a memory cell to be operated based on a location (e.g. memory segment within a memory array) of the memory cell. An input offset circuit of a global reference cell may be adjusted by the threshold offset value for the memory cell; and the memory cell may be operated (e.g. read, written or erased) using the global reference cell whose input offset circuit has been adjusted by the threshold offset value. According to some embodiments of the present invention global reference cells may consist of multiple sets of reference cells, wherein, according to some aspects, each set of the multiple sets of reference cells may be used for operating a different memory array segment. According to other aspects, each set of the multiple sets of reference cells may be used for operating a different state of memory array cells.
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Auduong Gene N.
EMPK & Shiloh, LLP
Saifon Semiconductors Ltd.
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