Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2011-03-08
2011-03-08
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S900000, C118S715000
Reexamination Certificate
active
07901508
ABSTRACT:
An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CCl4or halogenated hydrocarbons, CHCl3, CH2Cl2, CH3Cl, etc.), or introducing other chlorine-containing species in the gas phase in the growth chamber. The etching effect, proper ranges, and high temperature growth are also examined.
REFERENCES:
patent: 4228142 (1980-10-01), Holcombe, Jr.
patent: 4952715 (1990-08-01), Blum
patent: 5008422 (1991-04-01), Blum
patent: 5055431 (1991-10-01), Blum
patent: 5204314 (1993-04-01), Kirlin
patent: 5322913 (1994-06-01), Blum
patent: 5536323 (1996-07-01), Kirlin
patent: 5593783 (1997-01-01), Miller
patent: 5789024 (1998-08-01), Levy
patent: 5792416 (1998-08-01), Sacks
patent: 5851942 (1998-12-01), Sacks
patent: 6482262 (2002-11-01), Elers
patent: 6660330 (2003-12-01), Locke et al.
patent: 6733830 (2004-05-01), Todd
patent: 6783589 (2004-08-01), Dahl
patent: 6800552 (2004-10-01), Elers
patent: 6821825 (2004-11-01), Todd
patent: 6830822 (2004-12-01), Yadav
patent: 6849109 (2005-02-01), Yadav
patent: 6878628 (2005-04-01), Sophie
patent: 6958253 (2005-10-01), Todd
patent: 6982230 (2006-01-01), Cabral
patent: 6984591 (2006-01-01), Buchanan
patent: 6989428 (2006-01-01), Bianconi
patent: 7061073 (2006-06-01), Dahl
patent: 7247513 (2007-07-01), Kordina
patent: 2002/0042192 (2002-04-01), Tanaka et al.
Makarov Yuri
Spencer Michael
Kunemund Robert M
MaxvalueIP LLC
Widetronix, Inc.
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