Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Patent
1998-03-03
2000-10-31
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
438325, 438335, H01L 21331
Patent
active
061401943
ABSTRACT:
A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before masks are applied. This makes the positioning of masks less critical because they only have to be positioned within the area of the polysilicon layer. In this way, an accuracy of 0.1 .mu.m or better can be achieved.
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Andersson Karin
Hamberg Ivar
Ogren Nils
Olofsson Dimitri
Sjodin H.ang.kan
Nguyen Tuan H.
Telefonaktiebolaget LM Ericsson (publ)
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