Method relating to anodic bonding

Details Method relating to anodic bonding Method relating to anodic bonding

2005-10-04

2005-10-04

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000, C438S466000, C257S414000

Reexamination Certificate

active

06951797

ABSTRACT:
The present invention relates to a method of bonding a first member (110, 210, 130, 230, 410, 430, 510, 530, 610) to a second silicon member (120, 220, 420a,420b,600) through anodic bonding. The method comprises the steps of selectively depositing on said first member bondable sections (170a,170b,270, 470a,470b,470c,570, 620) before bringing said first and second members together for anodic bonding.

REFERENCES:
patent: 4291293 (1981-09-01), Yamada et al.
patent: 4746893 (1988-05-01), Shak
patent: 5095752 (1992-03-01), Suzuki et al.
patent: 5412867 (1995-05-01), Aikawa et al.
patent: 5591679 (1997-01-01), Jakobsen et al.
patent: 5837562 (1998-11-01), Cho
patent: 6548322 (2003-04-01), Stemme et al.
patent: 0742581 (1996-11-01), None
patent: 7086313 (1995-03-01), None
patent: 10256285 (1998-09-01), None

Affiliated with

Also associated with

Rating

Method relating to anodic bonding does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method relating to anodic bonding, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method relating to anodic bonding will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3491293