Method or process for producing PZT films at low substrate...

Details Method or process for producing PZT films at low substrate... Method or process for producing PZT films at low substrate...

2005-03-29

2005-03-29

Chen, Bret (Department: 1762)

Coating processes

Electrical product produced

Metallic compound coating

C427S255350, C427S255360

Reexamination Certificate

active

06872419

ABSTRACT:
A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr)2(dibm)2at a low substrate temperature of 450° C. or less in CVD. Starting materials are fed in a solution vaporization system. The starting materials, Ti (OiPr)2(dibm)2, used as a T1 source, and a combination of Pb(dpm)2-Zr(Oipr)(dpm)3-Ti(OiPr)2(dibm)2in n-butyl acetate are vaporized and supplied at 200° C. The vaporized starting materials are fed into a chamber and subjected to CVD at a substrate temperature of 420° C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. Ti(OiPr)2(dibm)2has a melting point of 105° C., a high solubility and a vapor pressure of 1 Torr/150° C. and does not react with Pb(dpm)2, and a solution thereof in n-butyl acetate has a pot life of 3 months.

REFERENCES:
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patent: 6376692 (2002-04-01), Kadokura et al.
patent: 02002212130 (2002-07-01), None

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