Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-05-31
2011-05-31
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S046000, C438S093000, C438S489000, C257S043000, C257S078000
Reexamination Certificate
active
07951639
ABSTRACT:
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2mask into stripes oriented in the gallium nitride <1100> or <1120> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm−2, which will find important applications in future electronic and optoelectronic devices.
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Chua Soon Jin
Lin Jianyi
Pan Hui
Zhou Hailong
National University of Singapore
Picardat Kevin M
Schwabe Williamson & Wyatt P.C.
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