Method of writing to an organic memory

Static information storage and retrieval – Read only systems – Fusible

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S151000, C365S105000

Reexamination Certificate

active

06903958

ABSTRACT:
The invention relates to a memory, based on organic material and applied in combination with an organic integrated circuit (integrated plastic circuit). The invention particularly relates to a memory for a RFID-Tag (RFID-tags: radio frequency identification tags) and several methods for describing a memory.

REFERENCES:
patent: 4340657 (1982-07-01), Rowe
patent: 4937119 (1990-06-01), Nickles et al.
patent: 5206525 (1993-04-01), Yamamoto et al.
patent: 5321240 (1994-06-01), Takahira
patent: 5347144 (1994-09-01), Garnier et al.
patent: 5364735 (1994-11-01), Akamatsu et al.
patent: 5486851 (1996-01-01), Gehner et al.
patent: 5574291 (1996-11-01), Dodabalapur et al.
patent: 5625199 (1997-04-01), Baumbach et al.
patent: 5691089 (1997-11-01), Smayling
patent: 5705826 (1998-01-01), Aratani et al.
patent: 5854139 (1998-12-01), Kondo et al.
patent: 5883397 (1999-03-01), Isoda et al.
patent: 5970318 (1999-10-01), Choi et al.
patent: 5973598 (1999-10-01), Belgel
patent: 5998805 (1999-12-01), Shi et al.
patent: 6045977 (2000-04-01), Chandross et al.
patent: 6072716 (2000-06-01), Jacobsen et al.
patent: 6087196 (2000-07-01), Sturm et al.
patent: 6133835 (2000-10-01), De Leeuw et al.
patent: 6150668 (2000-11-01), Bao et al.
patent: 6197663 (2001-03-01), Chandross et al.
patent: 6207472 (2001-03-01), Calligari et al.
patent: 6221553 (2001-04-01), Wolk et al.
patent: 6321571 (2001-11-01), Themont et al.
patent: 6329226 (2001-12-01), Jones et al.
patent: 6330464 (2001-12-01), Colvin et al.
patent: 6362509 (2002-03-01), Hart
patent: 6384804 (2002-05-01), Dodabalapur et al.
patent: 6498114 (2002-12-01), Amundson et al.
patent: 6555840 (2003-04-01), Hudson et al.
patent: 6593690 (2003-07-01), McCormick et al.
patent: 6603139 (2003-08-01), Tessler et al.
patent: 6621098 (2003-09-01), Jackson et al.
patent: 2002/0053320 (2002-05-01), Duthaler
patent: 2004/0084670 (2004-05-01), Tripsas et al.
patent: 4243832 (1994-06-01), None
patent: 198 16 860 (1999-11-01), None
patent: 198 51703 (2000-05-01), None
patent: 19933757 (2001-01-01), None
patent: 199 35 527 (2001-02-01), None
patent: 199 37 262 (2001-03-01), None
patent: 100 12204 (2001-09-01), None
patent: 100 43204 (2002-04-01), None
patent: 0 108 650 (1984-05-01), None
patent: 0 108650 (1984-05-01), None
patent: 0 418 504 (1991-03-01), None
patent: 0 418504 (1991-03-01), None
patent: 0 442123 (1991-08-01), None
patent: 0460242 (1991-12-01), None
patent: 0 511807 (1992-11-01), None
patent: 0 528662 (1993-02-01), None
patent: 0685985 (1995-12-01), None
patent: 0716458 (1996-06-01), None
patent: 0 786820 (1997-07-01), None
patent: 0962984 (1999-12-01), None
patent: 0 979715 (2000-02-01), None
patent: 0981165 (2000-02-01), None
patent: 1 048 912 (2000-11-01), None
patent: 1 103916 (2001-05-01), None
patent: 2793089 (2000-11-01), None
patent: 05152560 (1993-06-01), None
patent: 05259434 (1993-10-01), None
patent: WO 93 16491 (1993-08-01), None
patent: WO 94/17556 (1994-08-01), None
patent: WO 97/18944 (1997-05-01), None
patent: WO 98/40930 (1998-09-01), None
patent: WO 99/07189 (1999-02-01), None
patent: WO 99/10929 (1999-03-01), None
patent: WO 99 10939 (1999-03-01), None
patent: WO 99 21233 (1999-04-01), None
patent: WO 99 30432 (1999-06-01), None
patent: WO 99 39373 (1999-08-01), None
patent: WO 99 40631 (1999-08-01), None
patent: WO 99 54936 (1999-10-01), None
patent: WO 00/36666 (2000-06-01), None
patent: WO 01 15233 (2001-03-01), None
patent: WO 01/27998 (2001-04-01), None
patent: WO 01 47045 (2001-06-01), None
patent: WO 02 19443 (2002-03-01), None
patent: WO 02/47183 (2002-06-01), None
patent: WO 02/065557 (2002-08-01), None
patent: WO 00 79617 (2004-12-01), None
Garnier F et al:, “Vertical Devices Architecture By Molding Of Organic-Based Thin Film Transistor”, Applied Physics Letters, American Institute Of Physics. XP000784120, issn: 0003-6951 abbildung 2.
Collet J. et al:, Low Voltage, 30 NM Channel Length, Organic Transistors with a Self-Assembled Monolayer as Gate Insulating Films:, Applied Physics Letters, American Institute of Physics. New York, US, Bd 76, Nr. 14, Apr. 3, 2000, Seiten 1941-1943, XP000950589, ISSN:0003-6951, das ganze Dokument.
Hwang J D et al:, “A Vertical Submicron Slc thin film transistor”, Solid State Electronics, Elsevier Science Publishers, Barking, GB, Bd. 38, NR. 2, Feb. 1, 1995, Seiten 275-278, XP004014040, ISSN:0038-1101, Abbildung 2.
Rogers J A et al:, “Low-Voltage 0.1 Mum Organic Transistors and Complementary Inverter Circuits Fabricated with a Low-Cost Form of Near-Field Photolithography”, Applied Physics Letters, American Institute of Physics, New York, US, Bd. 75, Nr. 7, Aug. 16, 1999, Seiten 1010-1012, XP000934355, ISSN:003-6951, das ganze Dokument.
“Short-Channel Field-Effect Transistor”, IBM Technical Disclosure Bulletin, IBM Corp., New York, US, Bd. 32, Nr. 3A, Aug. 1, 1989, Seiten 77-78, XP000049357, ISSN:0018-8689, das ganze Dokument.
Redecker, M. et al., “Mobility enhancement through homogeneous nematic alignment of a liquid-crystalline polyfluorene”, 1999 American Institute of Physics, Applied Physics Letters, vol. 74, No. 10, pp. 1400-1402.
Rogers, J. A. et al:, “Printing Process Suitable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits”, Advanced Materials, VCH, Verlagsgesellschaft, Weinheim, DE, Bd. 11, Nr. 9, Jul. 5, 1999, Seiten 741-745, P000851834, ISSN: 0935-9648, das ganze Dokument.
Miyamoto, Shoichi et al:, Effect of LDD Structure and Channel Poly-Si Thinning on a Gate-All-Around TFT (GAT) for SRAM's, IEEE Transactions on Electron Devices. vol. 46, No. 8, Aug. 1999.
Kumar, Anish et al:, “Kink-Free Polycrystalline Silicon Double-Gate Elevated-Channel Thin-Film Transistors”, IEEE Transactions on Electron Devices, vol. 45, No. 12, Dec. 1998.
Chen, Shiao-Shien et al:, “Deep Submicrometer Double-Gate Fully-Depleted SOI PMOS Devices: A Concise Short-Channel Effect Threshold Voltage Model Using a Quasi-2D Approadh”, IEEE Transaction on Electron Devices, vol. 43, No. 9, Sep. 1996.
Zangara L: “Metall Statt Halbleiter, Programmierung Von Embedded ROMS Ueber Die Metallisierungen”, Elektronik, Franzis Verlag GMBH, Munchen, DE, Bd. 47, Nr. 16, Aug. 4, 1998, Seiten 52-55, XP000847917, ISSN: 0013-5658, Seite 52, rechtes Plate, Zeile 7-Seite 53, linke Spalte, Zeile 14; Abbildungen 1, 2.
Hergel, H. J.: “Pld-Programmiertechnologien”, Elektronik, Franzis Verlag GMBH. Munchen, DE, Bd 41, Nr. 5, Mar. 3, 1992, Seiten 44-46, XP000293121, ISSN: 0013-5658, Abbildungen 1-3.
Forrest et al.: “The Dawn of Organic Electronics”, IEEE Spectrum, Aug. 2000, Seiten 29-34, XP002189000, IEEE Inc., New York, US ISSN:0018-9235, Seite 33, rechte Spalte, Zelle 58-Seite 34, linke Spalte, Zeile 24; Abbildung 5.
Patent Abstracts of Japan, vol. 009, No. 274 (E-354), Oct. 31, 1985 & JP 60 117769 A (Fujitsu KK), Jun. 25, 1985 Zusammenfassung.
Zie Voor Titel Boek, de 2e Pagina, XP-002189001, PG 196-228.
Drury et al., “Low-Cost All-Polymer Integrated Circuits”, American Institute of Physics, Applied Physics Letters, 1998, vol. 73, No. 1, pp 108-110, Jul. 6, 1998.
Kuhlmann et al., “Terabytes in Plastikfolie”, Organische Massenspeicher vor der Serienproduktion.
Garnier, F. et al, “All-Polymer Field-Effect Transistor Realized by Printing Techniques”, Science, American Association for the Advancement of Science, US, vol. 265, Sep. 16, 1994, pp 1684-1686.
Assadi A, et al:, Field-Effect Mobility of Poly (3-Hexylthiophene) Dept. of Physics and Measurement Technology, accepted for Publication May 17, 1988.
Bao, Z. et al., “High-Performance Plastic Transistors Fabricated by Printing Techniques”, Chem. Mater vol. 9, No. 6, 1997, pp 1299-1301.
Drury, C. J. et al., “Low-cost all-polymer integrated circuits”, Applied Physics Letters, vol. 73, No. 1, Jul. 6, 1988, pp 108-110.
Angelopoulos M et al, “In-Situ Radiation Induced Doping”, Mol. Cryst. Liq. Cryst. 1990, vol. 189, pp. 221-225.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of writing to an organic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of writing to an organic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of writing to an organic memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3502077

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.