Method of writing information into a fuse-type ROM

Details Method of writing information into a fuse-type ROM Method of writing information into a fuse-type ROM

1987-06-10

1988-05-24

Popek, Joseph A.

Static information storage and retrieval

Read only systems

Fusible

357 65, G11C 1700

Patent

active

047470763

ABSTRACT:
Fuse-type ROM are provided with fuses which are formed on an insulating film, connected to conductor lines, and covered by a protective film. In order to write information into the fuse-type ROMs a ramp voltage is applied to the fuses so as to selectively and electrically blow the fuses without breaking the protective film. The ramp voltage increases substantially linearly, to a peak value, at a rate of from 10.sup.3 to 10.sup.5 volts/sec.

REFERENCES:
patent: 4402067 (1983-08-01), Moss et al.
patent: 4413272 (1983-11-01), Mochizuki et al.
patent: 4480318 (1984-10-01), Chong
"Programming Mechanism of Polysilicon Resistor Fuses," D. W. Greve, IEEE Transactions on Electron Devices, vol. Ed-29, No. 4, Apr. 1982, pp. 719-724.

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