Method of writing data to a semiconductor memory device

Details Method of writing data to a semiconductor memory device Method of writing data to a semiconductor memory device

2007-08-14

2007-08-14

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185220

Reexamination Certificate

active

11270499

ABSTRACT:
A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a non-volatile manner, the device having first and second memory cells disposed adjacent to each other to be sequentially written in this order, the method including: performing a first data write operation for writing data defined by a threshold voltage lower than a desired threshold voltage into the first memory cell; performing a second data write operation for writing data into the second memory cell; and performing a third data writing operation for writing data defined by the desired threshold voltage into the first memory cell.

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patent: 6925004 (2005-08-01), Shibata et al.
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patent: 2006/0120162 (2006-06-01), Fujiu et al.
U.S. Appl. No. 11/610,193, filed Dec. 13, 2006, Fukuka et al.
U.S. Appl. No. 11/270,499, filed Nov. 10, 2005, Fujiu et al.

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