Method of writing any patterns on a resist by an electron beam e

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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25049223, H01J 3702, G21G 500

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06093932&

ABSTRACT:
The present invention provides a method of writing at least a first pattern on a first region of a resist by a variable shaped electron beam exposure. The resist has at least a second region on which at least a second pattern is written by one-shot electron beam exposure. The second region is bounded by a boundary line with the first region so that the fist and second patterns are bounded by the boundary line with each other. The method comprises the steps of: setting a re-size amount; re-sizing a calibrated size of a variable shaped electron beam by a first amount which is smaller than the re-size amount; and shifting an origin for a shot of the variable shaped electron beam by a second amount which is substantially equal to a subtraction of the first amount from the re-size amount before a variable shaped electron beam shot is made.

REFERENCES:
patent: 5349197 (1994-09-01), Sakamoto et al.
patent: 5371373 (1994-12-01), Shibata et al.
patent: 5528512 (1996-06-01), Moriyama
patent: 5703376 (1997-12-01), Jensen
patent: 5876902 (1999-03-01), Veneklasen et al.

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