Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Patent
1997-04-18
1999-03-02
Kunemund, Robert
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
216 49, 216 51, 216102, 216101, 216 17, 216751, 216754, 216778, 216700, 216764, H01L 2144
Patent
active
058766146
ABSTRACT:
The method of wet etching an aluminum oxide substrate deposits a thin layer of titanium film or chromium film on the aluminum oxide surface prior to the application of the photo-resist coating to form a barrier between the aluminum oxide and the photo-resist. This barrier layer inhibits the reaction between the aluminum oxide and the photo-resist during the photolithographic process. The undercutting of the aluminum oxide in the wet etching process is therefore controlled by the deposition of the barrier layer comprising the thin layer of titanium film or chromium film. The titanium film used is nominally 30 .ANG. thick to obtain the beneficial effects noted above while the chromium film would be approximately 1000 .ANG. thick.
REFERENCES:
patent: 4556628 (1985-12-01), Greschner et al.
patent: 5286343 (1994-02-01), Hui
patent: 5385634 (1995-01-01), Butler et al.
patent: 5413953 (1995-05-01), Chien et al.
patent: 5449635 (1995-09-01), Jun
patent: 5470793 (1995-11-01), Kalnitsky
patent: 5635423 (1997-06-01), Huang et al.
Chaug Yi-Shung
Dey Subrata
McPherron Barry Allen
Zhou Bo
Kunemund Robert
Storage Technology Corporation
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