Method of wafer-to-wafer bonding

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S106000, C257SE23001

Reexamination Certificate

active

07659182

ABSTRACT:
Methods of wafer-to-wafer bonding are disclosed. These methods use a force-transposing substrate providing redistribution of the applied force to the local bonding areas across the wafer. Certain versions of the Present Invention also provide a compliant force-distributing member along with applying bonding material to bonding areas in select locations. A predetermined sequence of external force loading and temperature steps ensure creating bonds between the wafers in the bonding areas. The disclosed methods improve wafer bonding, by increasing its uniformity and strength across the wafer, increasing both reproducibility and yield process and decreasing cost of semiconductor and MEMS devices.

REFERENCES:
patent: 2003/0109183 (2003-06-01), Mastromatteo et al.
patent: 2006/0292823 (2006-12-01), Ramanathan et al.
patent: 2007/0090479 (2007-04-01), Chen et al.
patent: 2007/0181633 (2007-08-01), Erlach
Vladimir Vaganov, Nickolai Belov, Hout, “Three Dimensional Bonding Technologies for MEMS” presented at SPIE 2003.
Int'l Searching Authority, International Search Report and Written Opinion of the International Searching Authority for PCTUS0711989, mailed Aug. 20, 2008, 12 pages (86920PCT).

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