Method of wafer laser processing using a gas permeable...

Details Method of wafer laser processing using a gas permeable... Method of wafer laser processing using a gas permeable...

2005-01-05

2008-10-14

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S462000, C438S463000, C438S464000, C451S041000, C451S055000

Reexamination Certificate

active

07435607

ABSTRACT:
A laser processing method for forming a deteriorated layer, which has been once molten and then re-solidified, in the inside of a wafer by applying a pulse laser beam capable of passing through the wafer to the wafer along a dividing line formed on the wafer, comprising: a protective tape affixing step for affixing a protective tape having gas permeability to one side of the wafer; a wafer holding step for holding the wafer having the protective tape affixed thereto on the chuck table of a laser beam machine in such a manner that the surface side onto which the protective tape has been affixed comes into contact with the chuck table; and a laser beam application step for applying a pulse laser beam capable of passing through the wafer from the other surface side of the wafer held on the chuck table with its focusing point set to a position near the one surface of the wafer to form the deteriorated layer exposed to the one surface along the dividing line in the inside of the wafer.

REFERENCES:
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patent: 6177912 (2001-01-01), Izumi
patent: 6583383 (2003-06-01), Higashi et al.
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patent: 7134943 (2006-11-01), Nagai et al.
patent: 7232741 (2007-06-01), Nagai et al.
patent: 2002-192367 (2002-07-01), None

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