Method of wafer band-edge measurement using transmission...

Details Method of wafer band-edge measurement using transmission... Method of wafer band-edge measurement using transmission...

2005-05-10

2005-05-10

Paschall, Mark (Department: 3742)

Electric heating

Metal heating

By arc

C219S502000, C219S497000, C156S345270

Reexamination Certificate

active

06891124

ABSTRACT:
A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.

REFERENCES:
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patent: 5729038 (1998-03-01), Young et al.
patent: 5782253 (1998-07-01), Cates et al.
patent: 6062729 (2000-05-01), Ni et al.
patent: 6082892 (2000-07-01), Adel et al.
patent: 6160242 (2000-12-01), Guardado

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