Method of vertically integrating microelectronic systems

Details Method of vertically integrating microelectronic systems Method of vertically integrating microelectronic systems

1996-05-03

1998-12-22

Graybill, David

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

438459, 438690, 438691, 438692, 438693, 438759, 438940, 438975, 438977, H01L 21283, H01L 21304

Patent

active

058518940

ABSTRACT:
A method of fabricating vertically integrated microelectronic systems by CMOS-compatible standard semiconductor process technology, by independently processing individual component layers of at least two separate substrates, including the formation of via holes penetrating through all existing component layers and connecting together the front surfaces of the two substrates, thinning the reverse surface of one of the substrates down to the via holes, increasing the depth of the via holes to a metallization plane of the other substrate and forming electrically conductive connections between the two substrates through the via holes.

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