Method of verifying programming of a nonvolatile memory device

Details Method of verifying programming of a nonvolatile memory device Method of verifying programming of a nonvolatile memory device

2008-11-26

2010-11-02

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S203000

Reexamination Certificate

active

07826273

ABSTRACT:
A first verify voltage is applied to a word line of a selected memory cell, after a bit line is precharged, to program-verify the memory cell in a nonvolatile memory device. A first read evaluation operation for changing a voltage of the bit line is performed. Results of the first read evaluation operation are sensed using a first sensing voltage. A second read evaluation operation for changing the voltage of the bit line is performed again. Results of the second read verify operation are then sensed using the first sensing voltage.

REFERENCES:
patent: 5521864 (1996-05-01), Kobayashi et al.
patent: 1020060070734 (2006-06-01), None
patent: 1020070103199 (2007-10-01), None

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