Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-07-24
2007-07-24
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S924000
Reexamination Certificate
active
10750045
ABSTRACT:
A method of patterning a crystalline film. A crystalline film having a degenerate lattice comprising first atoms in a first region and a second region is provided. Dopants are substituted for said first atoms in said first region to form a non-degenerate crystalline film in said first region. The first region and the second region are exposed to a wet etchant wherein the wet etchant etches the degenerate lattice in said second region without etching the non-degenerate lattice in the first region.
REFERENCES:
patent: 3738880 (1973-06-01), Laker
patent: 3980507 (1976-09-01), Carley
patent: 4379001 (1983-04-01), Sakai et al.
patent: 4465528 (1984-08-01), Goto et al.
patent: 6255698 (2001-07-01), Gardner et al.
patent: 6309975 (2001-10-01), Wu et al.
patent: 6346485 (2002-02-01), Nihonmatsu et al.
patent: 19530 944 (1996-04-01), None
patent: 2 131 748 (1984-06-01), None
patent: 2 358 737 (2001-08-01), None
patent: 63 028067 (1988-02-01), None
patent: WO 2004/061915 (2004-07-01), None
patent: PCT/US2004/043393 (2004-12-01), None
patent: WO 2005/067026 (2005-07-01), None
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Weiss Howard
LandOfFree
Method of varying etch selectivities of a film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of varying etch selectivities of a film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of varying etch selectivities of a film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3788026