Method of vapor deposition

Details Method of vapor deposition Method of vapor deposition

1981-09-29

1983-02-15

Smith, John D.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427 74, 427 86, 4272481, 4272552, C23C 1100

Patent

active

043741630

ABSTRACT:
Disclosed is a method of forming a deposit, such as silicon, by the reaction of a reactant, such as lithium, with a gas containing the element or compound to be deposited, such as silicon tetrachloride. One reactant diffuses through the growing scale on a heated inert substrate to react with the gas on the other side of the scale and lead to further scale growth.

REFERENCES:
patent: 3139361 (1964-06-01), Rasmanis
patent: 3969163 (1976-07-01), Wakefield
patent: 4102767 (1978-07-01), Mazelsky
patent: 4225367 (1980-09-01), Anglerot
Chu et al., "High-Efficiency Thin-Film Polycrystalline-Silicon Solar Cells", J. Appl. Phys. 50 (2), Feb. 1979, pp. 919-921.

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