Method of utilizing a top conductive layer in isolating...

Details Method of utilizing a top conductive layer in isolating... Method of utilizing a top conductive layer in isolating...

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S050000, C438S051000, C438S052000, C438S066000, C438S067000, C438S069000

Reexamination Certificate

active

06841411

ABSTRACT:
A method of forming an image sensor array uses a transparent top conductive layer first as an etch mask in forming inter-pixel trenches and then as an etch stop in a planarization step, whereafter the top conductive layer is integral to operation of the completed image sensor array. During fabrication, a stack of layers is formed to collectively define a continuous photosensitive structure over an array area. The operationally dependent transparent top conductive layer is then used in the patterning of the photosensitive structure to form trenches between adjacent pixels. An insulating material is deposited within the trenches and the top conductive layer is then used as the etch stop in planarizing the insulating material. The method includes providing a connectivity layer that provides electrical continuity along the patterned top conductive layer.

REFERENCES:
patent: 5936261 (1999-08-01), Ma et al.
patent: 6326601 (2001-12-01), Hula et al.
patent: 6455836 (2002-09-01), Hula
patent: 6495387 (2002-12-01), French
patent: 6534333 (2003-03-01), Bird et al.

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