Method of utilizing a contact printing stamp

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C428S377000

Reexamination Certificate

active

11046107

ABSTRACT:
A method of using a contact printing stamp, including forming a transfer material on a plurality of stamping surfaces. The plurality of stamping surfaces are disposed on a plurality of stamp protrusions adapted from the forming of a stamp material in a plurality of recessed regions formed in an exposed end-region of a multilayer thin film structure.

REFERENCES:
patent: 5512131 (1996-04-01), Kumar et al.
patent: 6060121 (2000-05-01), Hidber
patent: 6365059 (2002-04-01), Pechenik
patent: 6407443 (2002-06-01), Chen
patent: 6518194 (2003-02-01), Winningham
patent: 6547940 (2003-04-01), Aksay
patent: 6599824 (2003-07-01), Krivokapic
patent: 6709929 (2004-03-01), Zhang
patent: 6755984 (2004-06-01), Lee
patent: 6764833 (2004-07-01), Yeatman
patent: 7060625 (2006-06-01), Lee
patent: 2003/0213382 (2003-11-01), Kendale
patent: 2004/0163758 (2004-08-01), Kagan
patent: WO 2004/012234 (2004-02-01), None
Chappell Brown; “Nanowire array manufacturing becoming a ‘Snap’”; EE Times On-line; http://eetimes.com/article/showArticle.jhtml?articleld=18308245&printable=true; Apr. 23, 2003.
Jung; Fabrication of a 34×34 crossbar structure at 50 nm Half-pitch by UV-based Nanoimprint Lithography; Nano Letters 2004, vol. 4, No. 7, p. 1225-1229.
Jung; Fabrication of molecular-electronic circuits by nanoimprint lithography at low temperatures and pressures; Applied Physics A 2004, p. 1169-1173.
Austin; Fabrication of 5nm linewidth and 14 nm pitch features by nanoimprint lithography; Applied Physics Letters 2004, vol. 84, No. 26, p. 5299-5301.
Kumar; Features of gold having micrometer to centimeter dimensions can be formed through a combination of . . . ; Applied Physics Ltrs, Oct. 4, 1993, vol. 63, No. 14, p. 2002-2004.
Melosh; Ultrahigh-density nanowire lattices and circuits; Science Mag, Apr. 4, 2003, vol. 300, p. 112-115.
Michel; Printing meets lithography: Soft approaches to high-resolution patterning; IBM J. Res & Dev, Sep. 5, 2001, vol. 45, No. 5, p. 697-719.
Ennis; Super hardening of W/NbN Nanolayers under shallow nanoindentation; Thesis-BSME, Univ of Pittsburgh, 2002, 60pgs.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of utilizing a contact printing stamp does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of utilizing a contact printing stamp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of utilizing a contact printing stamp will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3914063

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.