Method of using vertically configured chamber used for...

Details Method of using vertically configured chamber used for... Method of using vertically configured chamber used for...

2005-11-29

2005-11-29

King, Roy (Department: 1742)

Electrolysis: processes, compositions used therein, and methods

Electrolytic erosion of a workpiece for shape or surface...

C134S032000, C134S085000, C134S902000

Reexamination Certificate

active

06969456

ABSTRACT:
The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

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