Method of using source bias to raise threshold voltages and/or t

Details Method of using source bias to raise threshold voltages and/or t Method of using source bias to raise threshold voltages and/or t

1995-09-22

1997-01-21

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518502, 36518512, 36518518, 36518527, 3651853, 36518533, G11C 1600

Patent

active

055965288

ABSTRACT:
The method of this invention allows use of a smaller wordline voltage Vp1 during programming. In addition, the method results in a relatively narrow distribution of threshold voltages Vt when used to flash program an array of memory cells (10). The method of this invention increases compaction gate-current efficiency by reverse biasing the source (11)/substrate (23) junction of the cell being programmed. The reverse biasing is accomplished, for example, by applying a bias voltage to the source (11) or by placing a diode (27), a resistor (29) or other impedance in series with the source (11). The reverse biasing limits the source current (Is) of cell being programmed and of the entire array during flash-programming compaction.

REFERENCES:
patent: 5218571 (1993-06-01), Norris
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5481494 (1996-01-01), Tang et al.

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