Method of using source bias to increase threshold voltages and/o

Static information storage and retrieval – Floating gate – Particular biasing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518524, G11C 1600

Patent

active

054673062

ABSTRACT:
The method of this invention allows use of a smaller wordline voltage Vp1 during programming. In addition, the method results in a relatively narrow distribution of threshold voltages Vt when used to flash program an array of memory cells (10). The method of this invention increases compaction gate-current efficiency by reverse biasing the source (11)/substrate (23) junction of the cell being programmed. The reverse biasing is accomplished, for example, by applying a bias voltage to the source (11 ) or by placing a diode (27), a resistor (29) or other impedance in series with the source (11). The reverse biasing limits the source current (Is) of cell being programmed and of the entire array during flash-programming compaction.

REFERENCES:
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5197027 (1993-03-01), Challa
patent: 5212541 (1993-05-01), Bergemont
patent: 5215934 (1993-06-01), Tzeng
patent: 5218571 (1993-06-01), Norris
patent: 5222040 (1993-06-01), Challa
patent: 5258949 (1993-11-01), Chang et al.
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5295095 (1994-03-01), Josephson

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of using source bias to increase threshold voltages and/o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of using source bias to increase threshold voltages and/o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of using source bias to increase threshold voltages and/o will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1225860

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.