Static information storage and retrieval – Floating gate – Particular biasing
Patent
1993-10-04
1995-11-14
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518524, G11C 1600
Patent
active
054673062
ABSTRACT:
The method of this invention allows use of a smaller wordline voltage Vp1 during programming. In addition, the method results in a relatively narrow distribution of threshold voltages Vt when used to flash program an array of memory cells (10). The method of this invention increases compaction gate-current efficiency by reverse biasing the source (11)/substrate (23) junction of the cell being programmed. The reverse biasing is accomplished, for example, by applying a bias voltage to the source (11 ) or by placing a diode (27), a resistor (29) or other impedance in series with the source (11). The reverse biasing limits the source current (Is) of cell being programmed and of the entire array during flash-programming compaction.
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Holland Wayland B.
Kaya Cetin
Mezenner Rabah
Donaldson Richard L.
Heiting Leo N.
Lindgren Theodore D.
Nelms David C.
Texas Instruments Incorporated
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