Method of using photocathode and method of using electron tube

Details Method of using photocathode and method of using electron tube Method of using photocathode and method of using electron tube

1995-11-24

1999-12-14

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

H01L 2906, H01L 2912

Patent

active

060021411

ABSTRACT:
The present invention is to provide a method of using a photocathode including a laminated heterostructure of Group III-V semiconductors, which is constituted by a p-type light-absorbing layer formed on a p-type substrate and a p-type electron-emitting layer formed on the light-absorbing layer, a first electrode formed to have a rectifying function with respect to the electron-emitting layer, and a second electrode formed in ohmic contact with the substrate, wherein a voltage necessary and sufficient to form a potential gradient throughout the light-absorbing layer is applied between the first electrode and the second electrode, thereby accelerating photoelectrons excited in the light-absorbing layer which absorbs external incident light on the basis of an electric field formed in the light-absorbing layer and the electron-emitting layer and emitting the photoelectrons from the electron-emitting layer. The accelerated electrons largely decrease differences in transit time until reaching the emission surface of the electron-emitting layer as compared to diffused electrons. Therefore, the response speed of the photocathode for detecting external incident light is increased.

REFERENCES:
patent: 3958143 (1976-05-01), Bell
patent: 5047821 (1991-09-01), Costello et al.
patent: 5336902 (1994-08-01), Nigaki et al.
patent: 5404026 (1995-04-01), Mariella, Jr.

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