Method of using group III-V ferromagnetic/non-magnetic...

Electricity: measuring and testing – Magnetic – Magnetometers

Reexamination Certificate

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Reexamination Certificate

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07956608

ABSTRACT:
Methods of use of ferromagnetic Group III-V semiconductor
on-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

REFERENCES:
patent: 3818328 (1974-06-01), Zinn
patent: 4926226 (1990-05-01), Heremans et al.
patent: 7405086 (2008-07-01), LaBella et al.
May, SJ and Wessels, BW; Electronic and Magnetotransport Properties of Ferromagnetic p-(In,Mn)As
-InAs Heterojunctions; Journal of Vacuum Science and Technology B, 2005, 1769-1772, vol. 23, Is. 4.
Wessels, BW and May,S; High Field Magnetoresistance in p-(In,Mn)As
-InAs Heterojunctions; American Physical Society Meeting, Mar. 13-17, 2006, abstract #N19,001.
Karakushan É I; Stafeev VI. Magnetodiodes. Soviet Physics—Solid State, vol. 3, No. 3, Sep. 1961, pp. 493-498.
Lebedeva N; Kuivalainen P. Modeling of ferromagnetic semiconductor devices for spintronics. Journal of Applied Physics. vol. 93, No. 12, Jun. 15, 2003. pp. 9845-9864.
Soo YL; Kim S; Kao YH; Blattner AJ; Wessels BW; Khalid S; Sanchez Hanke C; Kao C-C. Local structure around Mn atoms in room-temperature ferromagnetic (In,Mn)As thin films probed by extended x-ray absorption fine structure. Applied Physics Letters, vol. 84, No. 4, Jan. 26, 2004, pp. 481-483.
Blattner AJ; Wessels BW. Ferromagnetic in (In, Mn)As allow thin films grown by metalorganic vapor phase epitaxy. Applied Surface Science 221 (2004), pp. 151-159.
Blattner AJ; Lensch J; Wessels BW. Growth and Characterization of OMVPE Grown (In,Mn)As Diluted Magnetic Semiconductor. Journal of Electronic Materials, vol. 30, No. 11, 2001, pp. 1408-1411.
Roumenin CH.S. 2D magnetodiode sensors based on SOS technology. Sensors and Actuators A 54 (1996) pp. 584-588.
{hacek over (Z)}utić, I; Fabian J; Sarma SD. Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/Nonmagnetic p-n Junctions. Physical Review Letters, vol. 88, No. 6, Feb. 11, 2002. pp. 066603-1-066603-4.

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