Method of using capacitive bonding in a high frequency...

Details Method of using capacitive bonding in a high frequency... Method of using capacitive bonding in a high frequency...

2007-05-01

2007-05-01

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S107000, C438S381000, C438S393000

Reexamination Certificate

active

11174824

ABSTRACT:
A method of manufacturing a high frequency integrated circuit begins by positioning a die within a package, wherein the die includes a circuit that processes a high frequency signal and at least one bond pad operably coupled to the circuit, and wherein the package includes a plurality of bond posts, wherein at least one of the plurality of bond posts is allocated to the at least one bond pad. The method continues by bonding a first plate of a capacitor to the at least one bond pad. The method continues by bonding a second plate of the capacitor to the at one of the plurality of bond posts.

REFERENCES:
patent: 5777528 (1998-07-01), Schumacher et al.
patent: 6140707 (2000-10-01), Plepys et al.

Affiliated with

Also associated with

Rating

Method of using capacitive bonding in a high frequency... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of using capacitive bonding in a high frequency..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of using capacitive bonding in a high frequency... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3742515