Method of using a wafer-thickness-dependant profile library

Details Method of using a wafer-thickness-dependant profile library Method of using a wafer-thickness-dependant profile library

2007-01-30

2009-08-04

Wachsman, Hal D (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system

Dimensional determination

C702S172000, C702S084000, C438S016000

Reexamination Certificate

active

07571074

ABSTRACT:
A method for facilitating an ODP (optical digital profile) measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on the wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying. The real time wafer characteristic data may be real time wafer thickness data.

REFERENCES:
patent: 6538731 (2003-03-01), Niu et al.
patent: 6785638 (2004-08-01), Niu et al.
patent: 6943900 (2005-09-01), Niu et al.
patent: 7171284 (2007-01-01), Vuong et al.
patent: 7330279 (2008-02-01), Vuong et al.
patent: 7388677 (2008-06-01), Vuong et al.
patent: 7451054 (2008-11-01), Deshpande et al.
patent: 2004/0017574 (2004-01-01), Vuong et al.
patent: 2005/0209816 (2005-09-01), Vuong et al.
patent: 2006/0064280 (2006-03-01), Vuong et al.
patent: 2008/0077352 (2008-03-01), Willis et al.
patent: 2008/0077362 (2008-03-01), Willis et al.

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