Method of using a wafer-temperature-dependent profile library

Details Method of using a wafer-temperature-dependent profile library Method of using a wafer-temperature-dependent profile library

2007-01-30

2008-11-11

Cosimano, Edward R. (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system

Temperature measuring system

C702S099000, C702S130000

Reexamination Certificate

active

07451054

ABSTRACT:
A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying.

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