Method of using a setter having a recess in manufacturing a...

Details Method of using a setter having a recess in manufacturing a... Method of using a setter having a recess in manufacturing a...

2005-01-28

2008-11-25

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S477000, C438S906000, C438S958000, C257SE21002, C117S101000

Reexamination Certificate

active

07456084

ABSTRACT:
There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

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