Method of under-filling semiconductor die in a die stack and...

Details Method of under-filling semiconductor die in a die stack and... Method of under-filling semiconductor die in a die stack and...

2009-06-30

2010-10-19

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S109000, C438S127000, C257SE21503

Reexamination Certificate

active

07816181

ABSTRACT:
A method of under-filling semiconductor die in a die stack and a semiconductor device formed thereby are disclosed. Once the semiconductor die are formed, they may be stacked and interconnected. The interconnection may leave a small space between semiconductor die in the die stack. This space is advantageously completely filled using a vapor deposition process where a coating is deposited as a vapor which flows over all surfaces of the die stack, including into the spaces between the die in the stack. The vapor then deposits on the surfaces between and around the die and forms a film which completely fills the spaces between the die in the die stack. The material used in the vapor deposition under-fill process may for example be a member of the parylene family of polymers, and in embodiments, may be parylene-N.

REFERENCES:
patent: 7579684 (2009-08-01), Benson et al.
patent: 2007/0048902 (2007-03-01), Hiatt et al.
patent: 2007/0202617 (2007-08-01), Hembree
patent: 2008/0122053 (2008-05-01), Ofner et al.
patent: 2008/0203539 (2008-08-01), Wood et al.

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