Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1994-01-12
1995-12-26
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330310, 330288, H03F 316
Patent
active
054791359
ABSTRACT:
A method of high frequency current signal amplification utilizing Metal-Oxide-Silicon Field Effect Transistors (MOSFETS) allows the use of MOSFETS for current signal amplification in the radio frequency (RF) range of the electromagnetic spectrum and minimizes the effects of parasitic capacitance. A current signal is applied to pluralities of MOSFETS arranged in amplification stages such that the amplification of the input current signal is determined by the ratio of the channel widths of the MOSFETS employed. Alternating amplification stages comprised of N-conductivity type and P-conductivity type devices are employed. The amplification of the signal can be precisely controlled by both the width of the channels within the MOSFETS and the number of current signal amplification stages employed. The output signal can also be converted to a voltage signal by coupling to a source of resistance or reactance.
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Advanced Micro Devices , Inc.
Gunnison Forrest E.
McKay Philip J.
Mottola Steven
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