Method of trimming semiconductor elements with electrical...

Details Method of trimming semiconductor elements with electrical... Method of trimming semiconductor elements with electrical...

2008-04-01

2008-04-01

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S467000, C438S600000, C257SE23147

Reexamination Certificate

active

10983314

ABSTRACT:
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).

REFERENCES:
patent: 5536947 (1996-07-01), Klersy et al.
patent: 6033938 (2000-03-01), Voogel et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 2006/0137402 (2006-06-01), Eichholz et al.

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