Method of trench filling

Details Method of trench filling Method of trench filling

1985-10-31

1988-05-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437 78, 437203, 437 90, H01L 2136, H01L 21425

Patent

active

047450819

ABSTRACT:
A method of simultaneously producing doped silicon filled trenches in areas where a substrate contact is to be produced and trench isolation in other areas. Borosilicate glass lines the sidewalls of those trenches where a contact is desired and undoped epitaxially grown silicon fills all the trenches. Subsequent heat processing causes the boron in the borosilicate to dope the epitaxial silicon in those trenches. In the other trenches, the silicon fill remains undoped except at the bottom where a channel stop exists, thereby forming isolation trenches. The contacts formed over the trenches may be formed by selectively deposition of a highly doped silicon into an opening that overlies a portion of the trench and the adjacent substrate surface.

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