Method of treatment of devices based on semiconductor and dielec

Details Method of treatment of devices based on semiconductor and dielec Method of treatment of devices based on semiconductor and dielec

1997-08-21

1999-12-07

Bowers, Charles

Metal treatment

Barrier layer stock material, p-n type

H01L 21309

Patent

active

059976594

ABSTRACT:
The invention provides a method for treating devices based on semiconductor and dielectric materials for improving their electrical, photoelectric, optical, luminescent and noise characteristics, for decreasing internal residual stresses in heterostructures and for increasing the device lifetime and the stability of its parameters. The method comprises subjecting the device to acoustic vibrations in the frequency range of 0.01 to 100 MHz, at an amplitude of relative acoustic strain in the range of 0.2.multidot.10.sup.-5 to 8.multidot.10.sup.-5, for a period of at least 0.25 hour.

REFERENCES:
S. Wolf and R.N. Tauber "Silicon Processing for the VLSI Era, vol. 1-Process Technology" Lattive Press, Sunset Beach, CA USA p. 109, 1986.
Zdebskil, A.P. et al. "Influence on acoustic and electrical properties of CdS." Sov. Phys. Solid State 29(4),pp. 648-651, Apr. 1987.
Ostrovskil, I.V. and Rozhko, A.Kh. "Acoustic Redistribution of Defects in Crystals" Sov. Phys. Solid State 26(12) pp. 2241-2242, Dec. 1984.
Pavlovich, V.N. "Enhanced Diffusion of Impurities and Defects in Crystals in Conditions of Ultrasonic and Radiative Excitation of the Crystal Lattice" Phys. Stat. Bol. (B). pp. 97-105, 1993.
Vavilov, V.S. "Atomic Migration and Related Changes in Defect Concentration and Structure deu to Electronic Subsystem Excitations in Semiconductors" Physics-Uspekhi pp., 387-392, Jul. 1996.
Arakelyan, V.S. et al. "Redistribution of Point Defects in NaCl under the Influence of the Field of a Standing Ultrasonic Wave" Sov. Phys. Solid State 27(8) p. 1521, Aug. 1985.

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